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| FDS7066N7 May 2003 FDS7066N7 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features * 23 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 V RDS(ON) = 5.5 m @ VGS = 4.5 V * High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Fast switching * FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications * Synchronous rectifier * DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 16 (Note 1a) Units V V A W C 23 60 3.0 1.7 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 C/W C/W Package Marking and Ordering Information Device Marking FDS7066N7 Device FDS7066N7 Reel Size 13'' Tape width 12mm Quantity 2500 units 2002 Fairchild Semiconductor Corporation FDS7066N7 Rev D2 (W) FDS7066N7 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = -16 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VGS = 10 V, VDS = 10 V, ID = 23 A ID = 21 A ID = 23 A, TJ = 125C VDS = 5 V ID = 23 A Min 30 Typ Max Units V Off Characteristics 24 1 100 -100 mV/C A nA nA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance 1 1.5 -4.3 3.5 4.0 5.0 3 V mV/C 4.5 5.5 6.3 m ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd 30 116 A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, V GS = 0 V, f = 1.0 MHz 4973 826 341 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 12 8 85 25 22 16 136 40 69 ns ns ns ns nC nC nC VDS = 15 V, ID = 23 A, VGS = 5.0 V 43 13 11 Drain-Source Diode Characteristics and Maximum Ratings VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 2.5 A (Note 2) 0.7 34.2 40.4 1.2 V nS nC IF = 23 A, diF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 40C/W when mounted on a 1in2 pad of 2 oz copper b) 85C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS7066N7 Rev D2 (W) FDS7066N7 Typical Characteristics 60 VGS = 10V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 0 0.25 0.5 0.75 1 1.25 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.5V 4.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 3.5V 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 ID, DIRAIN CURRENT (A) 3.5V 4.0V 4.5V 6.0V 10V VGS = 3.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.014 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID = 23A VGS = 10V ID = 11.5A 0.012 0.01 0.008 TA = 125oC 0.006 0.004 0.002 0 125 150 175 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC Figure 3. On-Resistance Variation withTemperature. 60 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5.0V 50 ID, DRAIN CURRENT (A) 40 30 20 25oC 10 -55oC 0 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC -55oC TA = 125oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7066N7 Rev D2 (W) FDS7066N7 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 23A 8 VDS = 5V 15V 10V 6400 5600 CAPACITANCE (pF) 4800 4000 3200 2400 1600 800 COSS CRSS 0 6 12 18 24 30 CISS f = 1 MHz VGS = 0 V 6 4 2 0 0 10 20 30 40 50 60 70 80 90 Qg, GATE CHARGE (nC) 0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 100s 1ms 10ms 100ms 1s DC P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 85C/W TA = 25C 30 1 VGS = 10V SINGLE PULSE RJA = 85oC/W TA = 25oC 0.01 0.01 0.1 1 20 0.1 10 10 100 0 0.01 0.1 1 t1, TIME (sec) 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) + RJA RJA = 85 C/W P(pk) t1 t2 SINGLE PULSE o 0.1 0.1 0.05 0.02 0.01 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS7066N7 Rev D2 (W) FDS7066N7 Dimensional Outline and Pad Layout FDS7066N7 Rev D2 (W) |
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